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TCED1100/TCED1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Gain
FEATURES
C E
* Extra low coupling capacity - typical 0.2 pF * High common mode rejection * Available in single or four channels * Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
17199
C
V DE
* Rated isolation VIOWM = 600 VRMS
voltage
(RMS
includes
DC)
DESCRIPTION
The TCED1100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
* Rated recurring peak VIORM = 600 VRMS (848 V peak)
voltage
(repetitive)
* Thickness though insulation 0.75 mm * Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 175 * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VDE STANDARDS
These couplers perform safety functions according to the following equipment standards: * DIN EN 60747-5-5 Optocoupler for electrical safety requirements * IEC EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) * VDE 0804 Telecommunication apparatus and data processing * IEC 60065 Safety for mains-operated household apparatus electronic and related
APPLICATIONS
* Switch-mode power supplies * Line receiver * Computer peripheral interface * Microprocessor system interface * Reinforced isolation provides circuit protection against electrical shock (safety class II) * Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5
AGENCY APPROVALS
* UL1577, file no. E76222 system code U, double protection * CSA 22.2 bulletin 5A, double protection * BSI IEC60950; IEC60065 * DIN EN 60747-5-5 * FIMKO
ORDER INFORMATION
PART TCED1100 TCED1100G Note G = leadform 10.16 mm; G is not marked on the body. REMARKS CTR 600 %, DIP-4 CTR 600 %, DIP-4
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83539 Rev. 1.8, 16-May-08
TCED1100/TCED1100G
Optocoupler, Phototransistor Output, High Gain
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature (2) 2 mm from case, t 10 s VISO Ptot Tamb Tstg Tsld 5000 250 - 40 to + 100 - 55 to + 125 260 VRMS mW C C C tp/T = 0.5, tp 10 ms VCEO VECO IC ICM Pdiss Tj 35 7 80 100 150 125 V V mA mA mW C tp 10 s VR IF IFSM Pdiss Tj 6 60 1.5 100 125 V mA A mW C
(1)
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector ermitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC =5 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz VCEsat fc Ck 10 0.3 1 V kHz pF IC = 1 mA IE = 100 A VCE = 10 V, IF = 0, E = 0 VCEO VECO ICEO 32 7 15 100 V V nA IF = 20 mA VR = 0 V, f = 1 MHz VF Cj 1.15 50 1.4 V pF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER IC/IF TEST CONDITION VCE = 2 V, IF = 1 mA PART TCED1100 SYMBOL CTR MIN. 600 TYP. 800 MAX. UNIT %
Document Number: 83539 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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TCED1100/TCED1100G
Vishay Semiconductors
MAXIMUM SAFETY RATINGS
PARAMETER INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM Tsi 8 150 kV C Pdiss 265 mW IF 130 mA TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Optocoupler, Phototransistor Output, High Gain
INSULATION RATED PARAMETERS
PARAMETER Partial discharge test voltage routine test Partial discharge test voltage lot test (sample test) TEST CONDITION 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V Insulation resistance VIO = 500 V, Tamb = 100 C VIO = 500 V, Tamb = 150 C (construction test only) SYMBOL Vpd VIOTM Vpd RIO RIO RIO MIN. 1.6 8 1.3 1012 1011 109 TYP. MAX. UNIT kV kV kV
300 P tot - Total Power Dissipation (mW) 250 200 Photodarlington Psi (mW)
VIOTM t1, t2 t3 , t4 ttest tstres VPd = 1 to 10 s =1s = 10 s = 12 s
150 100 50 0 0 25 50 75 100 125 150 IR-Diode Isi (mA)
VIOWM VIORM
0
13930
t3 ttest t4 t1 tTr = 60 s t2 t stres t
14887
Tamb - Ambient Temperature (C)
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747
SWITCHING CHARACTERISTICS
PARAMETER Rise time Fall time TEST CONDITION VCC = 2 V, IC = 10 mA, RL = 100 , (see figure 3) VCC = 2 V, IC = 10 mA, RL = 100 , (see figure 3) SYMBOL tr tf MIN. TYP. 300 250 MAX. UNIT s s
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Document Number: 83539 Rev. 1.8, 16-May-08
TCED1100/TCED1100G
Optocoupler, Phototransistor Output, High Gain
Vishay Semiconductors
0
IF
IF
+ V CC I C = 10 mA
IF 0 IC 100 % 90 % tp t
R G = 50 tp = 0.01 T t p = 50 s Channel I Channel II 50
14779
10 % 0
RL
Oscilloscope R I = 1 M C I = 20 pF
tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off
t
ts tf t off (= ts + tf)
Storage time Fall time Turn-off time
96 11698
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 4 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
CTR rel - Relative Current Transfer Ratio
1.3 I F = 10 mA 1.2 1.1 1.0 0.9 0.8 0
14389
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) VCE = 5 V I F = 1 mA
VF - Forward Voltage (V)
40 60 80 100 Tamb - Ambient Temperature (C)
20
14391
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature
1000
100 000
100
I CEO - Collector Dark Current, with Open Base (nA)
I F - Forward Current (mA)
10 000 1000 100 10 1 20
VCE = 10 V IF = 0
10
1
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14390
V F - Forward Voltage (V)
14392
30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)
Fig. 6 - Forward Current vs. Forward Voltage
Fig. 8 - Collector Dark Current vs. Ambient Temperature
Document Number: 83539 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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TCED1100/TCED1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Gain
1000
10 000
100
CTR - Current Transfer Ratio (%)
VCE = 2 V
VCE = 2 V
IC - Collector Current (mA)
1000
10
100
1
0.1 0.1
14393
1 10 I F - Forward Current (mA)
100
14396
10 0.1
1 10 I F - Forward Current (mA)
100
Fig. 9 - Collector Current vs. Forward Current
Fig. 12 - Current Transfer Ratio vs. Forward Current
100 I F = 2 mA
I C - Collector Current (mA)
1 mA 10 0.5 mA
1
0.2 mA 0.1 mA
0.1 0.1
14394
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 10 - Collector Current vs. Collector Emitter Voltage
V CEsat - Collector Emitter Saturation Voltage (V)
1.1 CTR = 200 % used 1.0 100 % 0.9 0.8 0.7 0.6 1 10 I C - Collector Current (mA) 100 50 % 25 %
14395
Fig. 11 - Collector Emitter Saturation Voltage vs. Collector Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83539 Rev. 1.8, 16-May-08
TCED1100/TCED1100G
Optocoupler, Phototransistor Output, High Gain
PACKAGE DIMENSIONS in millimeters
< 4.75 3.6 0.1 4.4 0.2 4.5 0.2 6.3 0.1 7.62 nom.
Vishay Semiconductors
0.53 0.05 9 0.8 1.32 0.05 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 43
3.3
0.25 0.0
5
Weight: ca. 0.25 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
12 2.54 2.54
14789
technical drawings according to DIN specifications
< 4.75 3.6 0.1 7.25 0.2 4.5 0.2 6.3 0.1
7.62 nom. 4.4 0.2 0.25 0.05
technical drawings according to DIN specifications 14792
0.53 0.05 1.32 0.05 2.54 nom. 10.16 0.3 E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 43
12 Weight: ca. 0.25 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board
2.54 2.54
Document Number: 83539 Rev. 1.8, 16-May-08
For technical questions, contact: optocoupler.answers@vishay.com
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TCED1100/TCED1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Gain
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number: 83539 Rev. 1.8, 16-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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